TY - JOUR
T1 - The effects of sintering temperature on dielectric constant of Barium Titanate (BaTiO3)
AU - Sandi, Dianisakhoirum
AU - Supriyanto, Agus
AU - Jamaluddin, Anif
AU - Iriani, Yofentina
N1 - Publisher Copyright:
© Published under licence by IOP Publishing Ltd.
PY - 2016/2/5
Y1 - 2016/2/5
N2 - Barium Titanate (BT) has been synthesized using solid-state reaction method. Raw materials are Barium Carbonate (BaCO3) and Titanium Dioxide (TiO2). These materials are mixed for 6 h and sintered at a temperature of 1000oC, 1100oC, and 1200oC for 2 h. The sintering temperature was varied to investigate its effects on microstructure and dielectric constant of BT. The XRD patterns showed that BT becomes homogenous, with the large lattice parameter as the increase of sintering temperature. The crystal structure of BT is tetragonal. The crystalline size and crystallinity of BT at a sintering temperature of 1000oC are 37 nm and 97%. Those values for BT at a sintering temperature of 1100oC are 38 nm and 96%. At a sintering temperature of 1200oC, the values are 41 nm and 97%. The dielectric constant of BT at a sintering temperature of 1000oC, 1100oC, and 1200oC are 148, 163, and 185, respectively. It can be concluded that sintering temperature affects microstructure and dielectric constant of BT. High sintering temperature produces a high dielectric constant of BT. It indicates that crystalline size increases.
AB - Barium Titanate (BT) has been synthesized using solid-state reaction method. Raw materials are Barium Carbonate (BaCO3) and Titanium Dioxide (TiO2). These materials are mixed for 6 h and sintered at a temperature of 1000oC, 1100oC, and 1200oC for 2 h. The sintering temperature was varied to investigate its effects on microstructure and dielectric constant of BT. The XRD patterns showed that BT becomes homogenous, with the large lattice parameter as the increase of sintering temperature. The crystal structure of BT is tetragonal. The crystalline size and crystallinity of BT at a sintering temperature of 1000oC are 37 nm and 97%. Those values for BT at a sintering temperature of 1100oC are 38 nm and 96%. At a sintering temperature of 1200oC, the values are 41 nm and 97%. The dielectric constant of BT at a sintering temperature of 1000oC, 1100oC, and 1200oC are 148, 163, and 185, respectively. It can be concluded that sintering temperature affects microstructure and dielectric constant of BT. High sintering temperature produces a high dielectric constant of BT. It indicates that crystalline size increases.
UR - http://www.scopus.com/inward/record.url?scp=84959925547&partnerID=8YFLogxK
U2 - 10.1088/1757-899X/107/1/012069
DO - 10.1088/1757-899X/107/1/012069
M3 - Conference article
AN - SCOPUS:84959925547
SN - 1757-8981
VL - 107
JO - IOP Conference Series: Materials Science and Engineering
JF - IOP Conference Series: Materials Science and Engineering
IS - 1
M1 - 012069
T2 - 10th Joint Conference on Chemistry
Y2 - 8 September 2015 through 9 September 2015
ER -