Solution processed zirconium oxide dielectric thin films for electronic applications

Keyphrases

• Solution Process 100%
• Electronic Applications 100%
• Zirconium Oxide 100%
• Dielectric Thin Films 100%
• Oxide Dielectrics 100%
• Zirconium Dioxide 66%
• PH Value 33%
• Good Quality 33%
• Memory Device 33%
• Annealing 33%
• Processing Conditions 33%
• Complexing Agent 33%
• Dielectric 33%
• Dielectric Materials 33%
• Mixed Oxides 33%
• High Dielectric Constant 33%
• Active Layer 33%
• Light Wave 33%
• Value Parameters 33%
• Organic-inorganic 33%
• Spray Pyrolysis 33%
• Thermal Annealing Effect 33%
• Large Band Gap 33%
• High-speed Devices 33%
• High-pressure Annealing 33%
• Resistive Random Access Memory (ReRAM) 33%
• Materials for Electronics 33%
• Dielectric Performance 33%
• Deposition Parameters 33%
• Oxygen Annealing 33%
• Thin-film Transistors 33%
• ZrO2 Thin Films 33%
• Alternative Processing 33%
• Low-cost Applications 33%
• Solution Processing 33%
• Low-voltage Operation 33%
• Multilayer Film 33%
• Oxygen Plasma Treatment 33%
• Overall Solution 33%
• Dielectric Deposition 33%

Engineering

• Thin Films 100%
• Dielectrics 100%
• Pyrolysis 20%
• Processing Condition 20%
• Operating Voltage 20%
• Device Performance 20%
• Active Layer 20%
• Complexing Agent 20%
• High Dielectric Constant 20%
• Random Access Memory Device 20%
• Thin-Film Transistor 20%
• Resistive Random Access Memory 20%
• Deposition Parameter 20%
• Multilayer Film 20%
• Plasma Treatment 20%
• Solution Processing 20%
• Band Gap 20%

Material Science

• Thin Films 100%
• Zirconia 100%
• Dielectric Material 100%
• Annealing 60%
• Permittivity 20%
• Oxide Compound 20%
• Thin-Film Transistor 20%
• Resistive Random-Access Memory 20%
• Multilayer Film 20%
• Spray Pyrolysis 20%