Solution processed zirconium oxide dielectric thin films for electronic applications

Zirconium oxide is a promising dielectric material for electronic applications due to favorable properties such as large band gap and high dielectric constant. It is compatible with solution processing, which can be a useful alternative method of dielectric deposition for low-cost applications while maintaining sufficiently good quality. The effects of the nature of precursors, complexing agents, catalysts, pH value, and deposition parameters have been reviewed. The effects of thermal annealing have been described, as well as alternative processing conditions such as spray pyrolysis, UV and light wave annealing, high pressure annealing, oxygen annealing, oxygen plasma treatment, etc. Additionally, mixed oxide, hybrid organic–inorganic, and multi-layer films have been reviewed as well. Thin film transistors have commonly been studied with solution processed ZrO₂ dielectrics, and high-performance devices with low operating voltages have been obtained. Resistive random access memory (RRAM) devices with ZrO₂ active layer have also been studied, showing promising characteristics. Overall, solution processed ZrO₂ thin films have great potential as dielectrics in electronic applications.