Q-switched hafnium bismuth erbium-doped fiber laser with bismuth (III) telluride based saturable absorber

U. N. Zakaria; S. W. Harun; P. H. Reddy; D. Dutta; S. Das; A. Dhar; M. C. Paul; Z. Jusoh; M. Yasin

Q-switched hafnium bismuth erbium-doped fiber laser with bismuth (III) telluride based saturable absorber

U. N. Zakaria, S. W. Harun, P. H. Reddy, D. Dutta, S. Das, A. Dhar, M. C. Paul, Z. Jusoh, M. Yasin

Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In this work, we fabricated the Bismuth (III) Telluride (Bi₂Te₃) based saturable absorber (SA) by embedding the material into polyvinyl Alcohol (PVA) film. By incorporating the film inside laser cavity with a homemade Hafnium Bismuth Erbium-doped fiber (HBEDF) as a gain medium, a stable Q-switched fiber laser was generated to operate at 1532 nm region. The repetition rate of the laser was tunable from 41.1 to 61.0 kHz while corresponding pulse width shrinks from 9.46 to 5.48 µs as the 980 nm pump power rises from 69 to 122 mW. The maximum pulse energy was 31.5 nJ. To the best of our knowledge, this is the first report on the Q-switched fiber laser using n relatively short length of HBEDF as the gain medium.

Original language	English
Pages (from-to)	181-186
Number of pages	6
Journal	Chalcogenide Letters
Volume	15
Issue number	4
Publication status	Published - Apr 2018

Keywords

BiTe
Bismuth (III) telluride
Hafnium Bismuth Erbium-doped fiber
Passive saturable absorber

Cite this

@article{2244a2f0a02241c6a581dba91e2b6d93,

title = "Q-switched hafnium bismuth erbium-doped fiber laser with bismuth (III) telluride based saturable absorber",

abstract = "In this work, we fabricated the Bismuth (III) Telluride (Bi2Te3) based saturable absorber (SA) by embedding the material into polyvinyl Alcohol (PVA) film. By incorporating the film inside laser cavity with a homemade Hafnium Bismuth Erbium-doped fiber (HBEDF) as a gain medium, a stable Q-switched fiber laser was generated to operate at 1532 nm region. The repetition rate of the laser was tunable from 41.1 to 61.0 kHz while corresponding pulse width shrinks from 9.46 to 5.48 µs as the 980 nm pump power rises from 69 to 122 mW. The maximum pulse energy was 31.5 nJ. To the best of our knowledge, this is the first report on the Q-switched fiber laser using n relatively short length of HBEDF as the gain medium.",

keywords = "BiTe, Bismuth (III) telluride, Hafnium Bismuth Erbium-doped fiber, Passive saturable absorber",

author = "Zakaria, {U. N.} and Harun, {S. W.} and Reddy, {P. H.} and D. Dutta and S. Das and A. Dhar and Paul, {M. C.} and Z. Jusoh and M. Yasin",

note = "Funding Information: This work is financially supported by Ministry of Higher Education Grant Scheme (FRGS/1/2015/SG02/UITM/03/3) and the University of Malaya (FG006-17AFR). Publisher Copyright: {\textcopyright} 2018, National Institute R and D of Materials Physics. All rights reserved.",

year = "2018",

month = apr,

language = "English",

volume = "15",

pages = "181--186",

journal = "Chalcogenide Letters",

issn = "1584-8663",

publisher = "National Institute R and D of Materials Physics",

number = "4",

}

TY - JOUR

T1 - Q-switched hafnium bismuth erbium-doped fiber laser with bismuth (III) telluride based saturable absorber

AU - Zakaria, U. N.

AU - Harun, S. W.

AU - Reddy, P. H.

AU - Dutta, D.

AU - Das, S.

AU - Dhar, A.

AU - Paul, M. C.

AU - Jusoh, Z.

AU - Yasin, M.

N1 - Funding Information: This work is financially supported by Ministry of Higher Education Grant Scheme (FRGS/1/2015/SG02/UITM/03/3) and the University of Malaya (FG006-17AFR). Publisher Copyright: © 2018, National Institute R and D of Materials Physics. All rights reserved.

PY - 2018/4

Y1 - 2018/4

N2 - In this work, we fabricated the Bismuth (III) Telluride (Bi2Te3) based saturable absorber (SA) by embedding the material into polyvinyl Alcohol (PVA) film. By incorporating the film inside laser cavity with a homemade Hafnium Bismuth Erbium-doped fiber (HBEDF) as a gain medium, a stable Q-switched fiber laser was generated to operate at 1532 nm region. The repetition rate of the laser was tunable from 41.1 to 61.0 kHz while corresponding pulse width shrinks from 9.46 to 5.48 µs as the 980 nm pump power rises from 69 to 122 mW. The maximum pulse energy was 31.5 nJ. To the best of our knowledge, this is the first report on the Q-switched fiber laser using n relatively short length of HBEDF as the gain medium.

AB - In this work, we fabricated the Bismuth (III) Telluride (Bi2Te3) based saturable absorber (SA) by embedding the material into polyvinyl Alcohol (PVA) film. By incorporating the film inside laser cavity with a homemade Hafnium Bismuth Erbium-doped fiber (HBEDF) as a gain medium, a stable Q-switched fiber laser was generated to operate at 1532 nm region. The repetition rate of the laser was tunable from 41.1 to 61.0 kHz while corresponding pulse width shrinks from 9.46 to 5.48 µs as the 980 nm pump power rises from 69 to 122 mW. The maximum pulse energy was 31.5 nJ. To the best of our knowledge, this is the first report on the Q-switched fiber laser using n relatively short length of HBEDF as the gain medium.

KW - BiTe

KW - Bismuth (III) telluride

KW - Hafnium Bismuth Erbium-doped fiber

KW - Passive saturable absorber

UR - http://www.scopus.com/inward/record.url?scp=85045740092&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:85045740092

SN - 1584-8663

VL - 15

SP - 181

EP - 186

JO - Chalcogenide Letters

JF - Chalcogenide Letters

IS - 4

ER -

Q-switched hafnium bismuth erbium-doped fiber laser with bismuth (III) telluride based saturable absorber

Abstract

Keywords

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