Performance analysis of Copper Tin Sulfide, Cu₂SnS₃ (CTS) with various buffer layers by using scaps in solar cells

This work examines the performance of the Cu₂SnS₃ (CTS) solar cells using the solar cell capacitance simulator (SCAPS) approach. The performance of the CTS solar cell was evaluated in terms of Voc, Jsc, fill factor and efficiency. The structural parameter variation of CTS solar cell has been studied in terms of buffer and absorber layer thickness, bandgap, effect of temperature on total efficiency of the solar cell. Increasing the thickness of the CdS buffer layer decreases the efficiency of the simulated solar cell. A significant increase in the efficiency of the solar cell to 20.36% was obtained with a simulated buffer layer thickness to 10nm. In terms of the CTS absorber layer thickness, the efficiency of the solar cell increases by increasing the thickness of absorber layer. By setting the thickness of CTS to 4.0μm, the efficiency obtained is 20.36%. It is observed that an increase in the bandgap can enhance the efficiency of the solar cell. In the performed simulation, an 0.9eV bandgap resulted in a 11.58% cell efficiency and a 1.25eV bandgap resulted in 21.96% cell efficiency. In terms of temperature, the efficiency of 20.36% was obtained at 300K, and as the temperature increases, cell efficiency will decrease.