TY - JOUR
T1 - Effect of sintering on transparent TiO2 18NR-T type thin films as the working electrode for transparent solar cells
AU - Supriyanto, A.
AU - Nandani,
AU - Wahyuningsih, S.
AU - Ramelan, A. H.
N1 - Publisher Copyright:
© 2017 Published under licence by IOP Publishing Ltd.
PY - 2018/4/6
Y1 - 2018/4/6
N2 - The working electrode based on semiconductor transparent TiO2 type 18NR-T for transparent solar cells have been grown by screen printing method. This study aim is to determine the effect of sintering on TiO2 thin films transparent as the working electrode of transparent solar cells. TiO2 films will be sintered at temperature 450°C, 500°C, 550°C and 600°C. TiO2 films optical properties were characterized using UV-Vis spectrophotometer, electrical properties were characterized using 4 point probemethods and the crystallization was characterized by X-Ray Diffraction (XRD). The lowest transmittance due to the treatment of annealing temperature variations is 550°C because the 550°C TiO2 layer is more absorbing. The peaks resulted from the annealing temperature treatment show that the high temperature the more anatase peaks. Characterization using four-point probe showed that the highest conductivity of TiO2 18NR-T thin film was 2.42 x 102 Ω-1m-1 at annealing temperature 550°C.
AB - The working electrode based on semiconductor transparent TiO2 type 18NR-T for transparent solar cells have been grown by screen printing method. This study aim is to determine the effect of sintering on TiO2 thin films transparent as the working electrode of transparent solar cells. TiO2 films will be sintered at temperature 450°C, 500°C, 550°C and 600°C. TiO2 films optical properties were characterized using UV-Vis spectrophotometer, electrical properties were characterized using 4 point probemethods and the crystallization was characterized by X-Ray Diffraction (XRD). The lowest transmittance due to the treatment of annealing temperature variations is 550°C because the 550°C TiO2 layer is more absorbing. The peaks resulted from the annealing temperature treatment show that the high temperature the more anatase peaks. Characterization using four-point probe showed that the highest conductivity of TiO2 18NR-T thin film was 2.42 x 102 Ω-1m-1 at annealing temperature 550°C.
UR - http://www.scopus.com/inward/record.url?scp=85045628887&partnerID=8YFLogxK
U2 - 10.1088/1757-899X/333/1/012028
DO - 10.1088/1757-899X/333/1/012028
M3 - Conference article
AN - SCOPUS:85045628887
SN - 1757-8981
VL - 333
JO - IOP Conference Series: Materials Science and Engineering
JF - IOP Conference Series: Materials Science and Engineering
IS - 1
M1 - 012028
T2 - 2nd International Conference on Advanced Material for Better Future 2017, ICAMBF 2017
Y2 - 4 September 2017 through 5 September 2017
ER -