@inproceedings{d6fe4f77330543f4ac5e118168785633,
title = "2D simulation analysis of electron distribution in p+-Si/n+-GaAs heterojunction using Archimedes 2.0.1, Monte Carlo simulator",
abstract = "The results of simulations and analyzes that have been carried out using Archimedes 2.0.1 are compared to the results of experiments that have been published. The characteristic is a current-voltage graph at p+-Si/n+-GaAs heterojunction. The comparison shows very good accuracy, 99.99%. The purpose of our study is to determine and explain the distribution of electrons in the depletion region, and their effects on the bias voltage applied to p+-Si/n+-GaAs heterojunction. From the simulation and analysis results obtained the depletion region is indicated at around the point 515 to 520 μm. Also, there is an influence on the bias voltage applied to p+-Si/n+-GaAs heterojunction, which is indicated by increasing the electron density value in the depletion region, because there are more electrons flowing in the device.",
author = "Dita Puspita and Lutfi Rohman and Agus Subekti and Herri Trilaksana",
note = "Publisher Copyright: {\textcopyright} 2020 Author(s).; 2nd International Conference on Physical Instrumentation and Advanced Materials, ICPIAM 2019 ; Conference date: 22-10-2019",
year = "2020",
month = dec,
day = "9",
doi = "10.1063/5.0035215",
language = "English",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics Inc.",
editor = "Herri Trilaksana and Harun, {Sulaiman Wadi} and Cameron Shearer and Moh Yasin",
booktitle = "2nd International Conference on Physical Instrumentation and Advanced Materials 2019",
}