2D simulation analysis of electron distribution in p+-Si/n+-GaAs heterojunction using Archimedes 2.0.1, Monte Carlo simulator

Dita Puspita, Lutfi Rohman, Agus Subekti, Herri Trilaksana

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The results of simulations and analyzes that have been carried out using Archimedes 2.0.1 are compared to the results of experiments that have been published. The characteristic is a current-voltage graph at p+-Si/n+-GaAs heterojunction. The comparison shows very good accuracy, 99.99%. The purpose of our study is to determine and explain the distribution of electrons in the depletion region, and their effects on the bias voltage applied to p+-Si/n+-GaAs heterojunction. From the simulation and analysis results obtained the depletion region is indicated at around the point 515 to 520 μm. Also, there is an influence on the bias voltage applied to p+-Si/n+-GaAs heterojunction, which is indicated by increasing the electron density value in the depletion region, because there are more electrons flowing in the device.

Original languageEnglish
Title of host publication2nd International Conference on Physical Instrumentation and Advanced Materials 2019
EditorsHerri Trilaksana, Sulaiman Wadi Harun, Cameron Shearer, Moh Yasin
PublisherAmerican Institute of Physics Inc.
ISBN (Electronic)9780735440562
DOIs
Publication statusPublished - 9 Dec 2020
Event2nd International Conference on Physical Instrumentation and Advanced Materials, ICPIAM 2019 - Surabaya, Indonesia
Duration: 22 Oct 2019 → …

Publication series

NameAIP Conference Proceedings
Volume2314
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference2nd International Conference on Physical Instrumentation and Advanced Materials, ICPIAM 2019
Country/TerritoryIndonesia
CitySurabaya
Period22/10/19 → …

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